About this product
Kondisi ProdukBekas
Tegangan Masuk (V)100
Jenis GaransiTanpa Garansi
Product description
Type Designator: IRFP4110 Type of Transistor: MOSFET
Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 100 Maximum Gate-Source Voltage |Vgs|: 20 Maximum Gate-Threshold Voltage |Vgs(th)|: 4 Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 150 nCRise Time (tr): 67 nS
Drain-Source Capacitance (Cd): 670 pF Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm