IRFP260N Cabutan, Ready stok sesuai gambar, Silahkan diorder.
Type Designator: IRFP260N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 200 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 234 nC Rise Time (tr): 60 nS Drain-Source Capacitance (Cd): 603 pF Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm