MDD1752 MDD 1752 Mdd 1752 D1752 Highquality

MDD1752, MDD1752RH N-Channel Trench MOSFET 40V, 50A TO-252 D-PAKType Magnachip Semiconductor Description The MDD1752 uses advanced MagnaChips trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features 1.VDS = 40V 2.ID = 50A @VGS = 10V 3.RDS(ON) < 8.0m @ VGS = 10V < 10.5m @ VGS = 4.5V Applications 1. Inverters 2.General purpose applications Absolute Maximum Ratings (TC =25oC unless otherwise noted) 1. Drain-Source Voltage : VDSS = 40 V 2. Gate-Source Voltage : VGSS = 20 V 3. Pulsed Drain Current : IDM = 100 A 4. Single Pulse Avalanche Energy: EAS = 153 mJ